Method and system for forming conductive bumping with copper interconnection

ABSTRACT

A method for making an integrated circuit system with one or more copper interconnects that are conductively connected with a substrate includes depositing and patterning a first dielectric layer to form a first via and filling the first via through the first dielectric layer with a copper material. The method further includes depositing and patterning a second dielectric layer in contact with the first dielectric layer to form a second via, and forming a diffusion barrier layer. Moreover, the method includes depositing and patterning a photoresist layer on the diffusion barrier layer, and at least partially filling the second via with a gold material. The gold material is conductively connected to the copper material through the diffusion barrier layer. The method further includes removing the photoresist and the diffusion barrier layer not covering by the gold material. Additionally, the method includes conductively connecting the gold material with the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional application of U.S. applicationSer. No. 12/258,956, filed Oct. 27, 2008, the entire content of which isincorporated herein by reference for all purposes. The U.S. applicationSer. No. 12/258,956 claims the benefit and priority under 35 U.S.C. 119of Chinese Application No. 200810040739X, filed Jul. 15, 2008, commonlyassigned, and incorporated herein by reference for all purposes.

BACKGROUND OF THE INVENTION

The present invention is directed to integrated circuits and theirprocessing for the manufacture of semiconductor devices. Moreparticularly, the invention provides a method and system for formingconductive bumping with copper interconnection. Merely by way ofexample, the invention has been applied to flip chip lead free bumpingprocess for the manufacture of integrated circuit with one or morecopper interconnects. But it would be recognized that the invention hasa much broader range of applicability.

Integrated circuits or “ICs” have evolved from a handful ofinterconnected devices fabricated on a single chip of silicon tomillions of devices. Current ICs provide performance and complexity farbeyond what was originally imagined. In order to achieve improvements incomplexity and circuit density (i.e., the number of devices capable ofbeing packed onto a given chip area), the size of the smallest devicefeature, also known as the device “geometry”, has become smaller witheach generation of ICs. Semiconductor devices are now being fabricatedwith features less than a quarter of a micron across.

Increasing circuit density has not only improved the complexity andperformance of

ICs but has also provided lower cost parts to the consumer. An ICfabrication facility can cost hundreds of millions, or even billions, ofdollars. Each fabrication facility will have a certain throughput ofwafers, and each wafer will have a certain number of ICs on it.Therefore, by making the individual devices of an IC smaller, moredevices may be fabricated on each wafer, thus increasing the output ofthe fabrication facility. Making devices smaller is very challenging, aseach process used in IC fabrication has a limit. That is to say, a givenprocess typically only works down to a certain feature size, and theneither the process or the device layout needs to be changed. An exampleis that for increasing packing density in IC, copper/low-k dielectricmaterials have been rapidly replacing conventionalaluminum-alloy/SiO₂-based interconnects in integrated circuits to reducethe interconnect delays for faster devices with low power consumptionand cost.

Currently for copper interconnect chips, aluminum alloy pad is stillwidely used. The aluminum alloy pad is easy for wire bonding as aninterconnect method and the aluminum pad can function as a fuse.However, the disadvantage of using aluminum pad also can be seen by itshigh resistance compared to copper, additional mask needed to patternthe bond pad to overcome problems related to the aluminumchemical-mechanical planarization (CMP) process, and problems incontrolling cross contamination between aluminum and copper.

From the above, it is seen that an improved technique for processingsemiconductor devices is desired.

BRIEF SUMMARY OF THE INVENTION

The present invention is directed to integrated circuits and theirprocessing for the manufacture of semiconductor devices. Moreparticularly, the invention provides a method and system for formingconductive bumping with copper interconnection. Merely by way ofexample, the invention has been applied to flip chip lead free bumpingprocess for the manufacture of integrated circuit with one or morecopper interconnects. But it would be recognized that the invention hasa much broader range of applicability.

According to an embodiment of the present invention, a method for makingan integrated circuit system with one or more copper interconnects isprovided, the one or more copper interconnects are conductivelyconnected with a substrate. The method includes depositing andpatterning a first dielectric layer to form a first via and filling thefirst via through the first dielectric layer with a copper material. Themethod further includes depositing and patterning a second dielectriclayer in contact with the first dielectric layer to form a second via,and forming a diffusion barrier layer. The diffusion barrier layer atleast partially fills the second via through the second dielectriclayer. At least a first part of the diffusion barrier layer in directcontact with the copper material, and at least a second part of thediffusion barrier layer in direct contact with the second dielectriclayer. Moreover, the method includes depositing and patterning aphotoresist layer on the diffusion barrier layer, and at least partiallyfilling the second via with a gold material. The gold material isconductively connected to the copper material through the diffusionbarrier layer. The method further includes removing the photoresist andthe diffusion barrier layer not covering by the gold material.Additionally, the method includes conductively connecting the goldmaterial with the substrate.

According to another embodiment of the present invention, an integratedcircuit system with one or more copper interconnects is provided. Theone or more copper interconnects are in conductive contact with asubstrate. The integrated circuit system includes a first dielectriclayer, and a copper material filling a first via through the firstdielectric layer. Additionally, the integrated circuit system includes asecond dielectric layer in contact with the first dielectric layer, anda diffusion barrier layer. The diffusion barrier layer at leastpartially fills a second via through the second dielectric layer. Atleast a first part of the diffusion barrier layer is in direct contactwith the copper material, and at least a second part of the diffusionbarrier layer is in direct contact with the second dielectric layer.Moreover, the integrated circuit system includes a gold material atleast partially filling the second via. The gold material isconductively connected with the copper material through the diffusionbarrier layer and conductively connected with a substrate.

Many benefits are achieved by way of the present invention overconventional techniques. For example, in lead free flip chip goldbumping process, the present technique provides an replacement of thealuminum wire bonding by gold bumping. In another example, the presenttechnique provides a full copper interconnection for the gold bumpingprocess without Al material for the whole process. Some embodiments ofthe present invention provide an integrated circuit system with one ormore copper interconnects without Al material. Certain embodiments ofthe present invention provide a process that is compatible withconventional process technology. Moreover, the process does not requirean additional mask for patterning the copper bond pad. Some embodimentsof the present invention utilize copper CMP process to automaticallypatterning the copper bond pad . Certain embodiments of the presentinvention reduce the possibility of the cross contamination betweenaluminum and copper. Some embodiments of the present invention improvethe speed of the whole chip. Depending upon the embodiment, one or moreof these benefits may be achieved. These and other benefits will bedescribed in more throughout the present specification and moreparticularly below.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified diagram of a conventional integrated circuitsystem with copper interconnects.

FIG. 2 is a simplified diagram of an integrated circuit system withcopper interconnects according to an embodiment of the presentinvention.

FIG. 3 is a simplified method for making an integrated circuit systemwith one or more copper interconnects according to an embodiment of thepresent invention.

FIGS. 4A-4G are simplified diagrams showing the processing steps to makebond pads for an integrated circuit system with one or more copperinterconnects and to form conductive contact with a substrate through aflip chip bumping according to some embodiments of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to integrated circuits and theirprocessing for the manufacture of semiconductor devices. Moreparticularly, the invention provides a method and system for formingconductive bumping with copper interconnection. Merely by way ofexample, the invention has been applied to flip chip lead free bumpingprocess for the manufacture of integrated circuit with one or morecopper interconnects. But it would be recognized that the invention hasa much broader range of applicability.

Conventionally, aluminum (Al) pad is still widely used in the copperinterconnect chips. The main purpose of implementation of A1 pad incopper interconnection is for accommodating the wire bonding. FIG. 1shows a simplified diagram of a conventional integrated circuits withcooper interconnects and Al pad on top of copper material for wirebonding. The first dielectric layer 110 is a low-k dielectric materialthat can be fluorinated silica glass (FSG) deposited on top of a nitridelayer 105. Copper 130 fills at least partially a first via 120, and thefirst via 120 is patterned through the first dielectric layer 110. Onthe first dielectric layer 110, a second dielectric layer 150 isdeposited and patterned to provide a second via 160.

Aluminum material is directly added on top of copper material 130 in thesecond via 160 and contact with copper material 130 to form A1 pad 170.Then a diffusion barrier layer 180 is deposited on A1 pad 170. On thebarrier layer 180, gold material is added to form a gold pad 190. Insuch an integrated circuit, there are several significant disadvantagesfor using Al pad 170. First of all, aluminum has high resistancecompared to copper. Secondly, due to the difficulties in the A1 CMPprocess, additional mask often is required in order to pattern the bondpad. Further, it is difficult in metallurgical control of the crosscontamination between Al pad 170 and copper interconnects 130.

FIG. 2 is a simplified diagram of an integrated circuit system with oneor more copper interconnects according to one embodiment of the presentinvention. This diagram is merely an example, which should not undulylimit the scope of the claims. One of ordinary skill in the art wouldrecognize many variations, alternatives, and modifications. Theintegrated circuits with one or more copper interconnects 200 includes anitride layer 205, a dielectric layer 210, a via 220, copperinterconnects 230, and a dielectric layer 250, a via 260, a diffusionbarrier layer 280, a gold pad 290.

The nitride layer 205 may be located on a substrate. For example, thenitride layer 205 is a passivation layer for one or more devices. Inanother example, the nitride layer 205 may be replaced by other type ofdielectric materials. According to some embodiments of the invention,the nitride layer 205 may be replaced by oxide and/or oxynitride.

On top of the nitride layer 205, the dielectric layer 210 is deposited.In one embodiment, the dielectric layer 210 includes a low-k dielectricmaterial. In an exemplary embodiment, the low-k dielectric material isfluorinated silica glass (FSG). In another exemplary embodiment, thelow-k dielectric material is carbonized silicon dioxide.

The dielectric layer 210 is patterned to provide a via 220. For example,the via 220 extends from the bottom surface of the dielectric layer 210to the top surface of the dielectric layer 210. In another example, thevia 220 has a predetermined shape. In one embodiment, the via 220 has across-section varying with the depth of the via. In another embodiment,the side surface of the via 220 includes one or more steps.

As shown in FIG. 2, the via 220 is filled with copper material to formone or more copper interconnects 230. The surface of top copperinterconnects 230 and the surrounding dielectric layer 210 isplanarized, on which the dielectric layer 250 is deposited. In oneembodiment, the dielectric layer 250 includes a sub-layer 251 and asub-layer 252 sequentially formed over sub-layer 251. In one exampleembodiment, the sub-layer 251 is a passivation oxide. In another exampleembodiment, the sub-layer 251 is silicon-rich oxide. In yet anotherexample embodiment, the sub-layer 252 is selected from a groupconsisting of passivation SiON, Nitride, BCB (bisbenzocyclobutene), andpolyimide. In an embodiment, BCB is used for the sub-layer 252 due toits low dielectric constant of 2.7 and low water absorption.

The dielectric layer 250 is patterned to form a via 260. The via 260 isaligned to and connected with at least one copper interconnect 230. Forexample, the via 260 extends from the top surface of the copperinterconnect 230 to the top surface of the dielectric layer 250. Inanother example, the via 260 has a predetermined shape. In oneembodiment, the cross-section dimension of the via 260 at the bottom iswider than the cross-section dimension of copper interconnect 230 at thetop. In another embodiment, the via 260 has a cross-section varying withthe depth of the via.

As shown in FIG. 2, a diffusion barrier layer 280 overlays the surfacesof the via 260 including the sides and the bottom of the via. Thediffusion barrier layer 280 extends outside the upper edge of the via260 to cover additional surface region of the dielectric layer 240surrounding the via 260. In one embodiment, the diffusion barrier layer280 includes a metallic material selected from a group consisting of Ta,TaN, TaN/Ta, TiN, TiSiN, W, TiW, or WN. In another embodiment, a goldseed layer is included in the diffusion barrier layer 280.

On top of the diffusion barrier layer 280, gold material is plated toform a gold pad 290. In one embodiment, the gold pad 290 forms aconductive contact to the copper interconnects 230 at the bottom of thevia 260 through only the diffusion barrier layer 280. In anotherembodiment, the gold pad 290 overlaying the diffusion barrier layer 280has a larger cross-section dimension than that of the via 260. In yetanother embodiment, the gold pad 290 has an extended portion verticallyabove the surface of the dielectric layer 250 with a certain height. Theextended portion of the gold pad 290 is re-shaped to form a gold bump.The gold bump can be used to form a conductive contact with a substratethrough a flip chip gold bumping process.

As described above and further emphasized here, FIG. 2 is merely anexample, which should not unduly limit the scope of the claims. One ofordinary skill in the art would recognize many variations, alternatives,and modifications. For example, gold material has been shown to be usedin the pad for flip chip bumping contact with a substrate. But there canbe many alternatives for the pad material. In one embodiment, the padmaterial can be copper, nickel, or silver. In another embodiment, thesubstrate to which the integrated circuits with one or more copperinterconnects are conductively contacted through the flip chip bumpingprocess can be, but not limited to, a PCB board, an interposer, or aglass substrate.

FIG. 3 is a simplified method for making an integrated circuit systemwith one or more copper interconnects according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims. One of ordinary skill in the artwould recognize many variations, alternatives, and modifications. Themethod 300 includes a process 310 for depositing and patterning adielectric layer, a process 320 for forming copper interconnects, aprocess 330 for depositing and patterning another dielectric layer, aprocess 340 for forming a diffusion barrier layer, a process 350 forresist coating and patterning, a process 360 for gold plating, a process370 for resist stripping, etching, and annealing, and a process 380 forforming conductive contact with substrate. Further details of theseprocesses are found throughout the present specification and moreparticularly below.

At the process 310, a dielectric layer is deposited on top of a nitridelayer and patterned. FIG. 4A is a simplified diagram showing the process310 for depositing and patterning a dielectric layer for formingconductive bumping with copper interconnection according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims. One of ordinaryskill in the art would recognize many variations, alternatives, andmodifications. A dielectric layer 210 is deposited on top of a nitridelayer 205 and patterned.

For example, the dielectric layer 210 is a dielectric material with lowdielectric constant (k). In one embodiment, the low-k dielectric isfluorinated silica glass (FSG). In another embodiment, the low-kdielectric is carbonized silicon dioxide. The deposition of thedielectric layer 210 can be performed by various techniques. Forexample, the dielectric layer is formed by a chemical vapor depositionprocess and/or a sputtering process. In another example, the chemicalvapor deposition process is selected from plasma-assisted chemical vapordeposition and low-pressure chemical vapor deposition.

The patterning of the dielectric layer 210 is accomplished by using aphotoresist layer according to an embodiment of the present invention.For example, the photoresist layer is deposited and then exposed with aphotolithography mask. In one embodiment, the photoresist layer is apositive resist. In another embodiment, the photoresist is a negativeresist. The patterning of the dielectric layer 210 is further performedby etching and resist stripping. The etching and the resist strippinglead to the formation of one or more vias 220 on the dielectric layer210 through the thickness of the dielectric layer. The vias 220,depending on the patterning process based on the circuit designrequirement, can be of various shapes or dimensions. For example, thediameter of the via 220 can be the same or different over the depth ofthe via 220 or can have steps.

At the process 320, the copper interconnects are formed in vias createdby the process 310. The simplified diagram in FIG. 4A also shows theprocess 320 for forming copper interconnects according to an embodimentof the present invention. This diagram is merely an example, whichshould not unduly limit the scope of the claims. One of ordinary skillin the art would recognize many variations, alternatives, andmodifications. For example, forming copper interconnect 230 in via 220is implemented in the device 200.

A metal barrier layer 225 is deposited to coat the surfaces of the vias220. In one embodiment, the barrier layer 225 is TaN. On the metalbarrier layer 225, the copper material is deposited to at leastpartially fill the vias 220. The deposition of the copper material canbe performed by various techniques. In an embodiment, the coppermaterial is added by a chemical vapor deposition process and/or asputtering process.

After the copper material at least partially fills the vias 220, thecopper interconnects 230 for the integrated circuits are formed. Forexample, the formation of the copper interconnects 230 is assisted byphoto-lithography processes. Subsequently, the top copper interconnectsare processed for bond pad patterning. For example, the bond padpatterning is processed automatically by copper CMP without anadditional mask. As shown in FIG. 4A, according to an embodiment, theprocess 320 yields a surface including a top copper interconnect 230that will be used for bond pad and those not used for bond pads.

At the process 330, a dielectric layer is deposited on top of thesurface prepared in process 320 and then patterned. FIG. 4B is asimplified diagram showing a method for depositing and patterning asecond dielectric layer for forming conductive bumping with copperinterconnection according to an embodiment of the present invention.This diagram is merely an example, which should not unduly limit thescope of the claims. One of ordinary skill in the art would recognizemany variations, alternatives, and modifications.

Referring to FIG. 4B, in one embodiment of the present invention, thedielectric layer 250 includes two sub-layers 251 and 252. For example,the sub-layer 251 is formed by the passivation of oxide or silicon-richoxide on the surface of copper interconnects 230. The sub-layer 252 issubsequently formed by the passivation SiON or Nitride orbisbenzocyclobutene (BCB) or Polyimide. According to a preferredembodiment of the invention, the sub-layer 252 is BCB due to its desiredproperties of low dielectric constant (2.7) and low water absorption.

The dielectric layer 250 is then patterned by using a photoresist layeraccording to an embodiment of the present invention. For example, thephotoresist layer is deposited and then exposed with a photolithographymask applied. The resist in the exposed region is washed out to form anopening that reveals a surface region of the dielectric layer 250. Theresist layer opening is designed to center-align with the copperinterconnects 230 to be used for bond pads. In one embodiment, thephotoresist layer is a positive resist. In another embodiment, thephotoresist is a negative resist.

Referring to FIG. 4B, according to an embodiment of the presentinvention, dielectric material is etched from the surface region of thedielectric layer 250 that is exposed by the resist layer opening. Forexample, the dry etching is performed to remove the dielectric layer250. In one embodiment, the etching is highly anisotropic so thatmaterial of dielectric layer 250 is removed vertically much faster thanlaterally. In another embodiment, the etching is performed through thewhole thickness of the dielectric layer 250 then is stopped at the topsurface of the copper interconnects 230 by a pre-applied etch-stoplayer. After removing the debris of the resist layer, a via 260 isformed in the dielectric layer 250. For example, by controlling theresist layer patterning and etching process parameters, the just formedvia 260 is located on the copper interconnects 230 to be used for bondpads. The via 260 has a depth equal to the thickness of the dielectriclayer 250 and a cross-sectional dimension equal to or larger than thatof the copper interconnects 230.

At the process 340, a metal diffusion barrier layer is formed. FIG. 4Cis a simplified diagram showing a method for forming a diffusion barrierlayer for forming conductive bumping with copper interconnectionaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications.

As shown in FIG. 4C, the diffusion barrier layer 280 overlays the wholesurface including the bottom surface of the via 260, the side surfacewithin the via 260, and the top surface of the dielectric layer 250. Thedeposition of the diffusion barrier layer 280, according to oneembodiment of the present invention, can be performed by PVD. Accordingto some embodiments of the invention, the diffusion barrier layer 280may be at least one material layer selected from a group consisting ofTa, TaN, TaN/Ta, TiN, TiSiN, W, TiW, and WN. In yet another embodiment,the diffusion barrier layer 280 includes a gold seed layer. Thedeposition of the diffusion barrier layer 280 can be also performed byvarious techniques. For example, the diffusion barrier layer 280 isformed by a chemical vapor deposition process and/or atomic layerdeposition.

At the process 350, a resist layer is coated and patterned. FIG. 4D is asimplified diagram showing a method for coating and patterning resistlayer for forming conductive bumping with copper interconnectionaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications.

Referring to FIG. 4D, a photoresist layer 285 is coated on top of thediffusion barrier layer 280. For example, the resist layer 285 ispatterned by exposure through a photolithography mask pre-aligned withthe via 260. After developing the resist layer 285 and removing theportions that were exposed, an opening of the resist layer 285 is formedto locate right over the via 260. The shape of the opening is similar tothat of via 260 and the lateral dimension can be bigger so that thesidewall of the resist opening is outside the rim of via 260. In oneembodiment, the photoresist layer 285 is a positive resist. In anotherembodiment, the photoresist 285 is a negative resist. The resist openingplus the via 260 create a cavity for forming the bumping pad in laterprocess. In yet another embodiment, the thickness of the resist layer285 is pre-determined to ensure the bumping pad to be formed has adesired height above via 260.

At the process 360, gold plating is performed. FIG. 4E is a simplifieddiagram showing a method for gold plating for forming conductive bumpingwith copper interconnection according to an embodiment of the presentinvention. This diagram is merely an example, which should not undulylimit the scope of the claims. One of ordinary skill in the art wouldrecognize many variations, alternatives, and modifications.

Referring to FIG. 4E, to form a bumping pad conductively connectingcopper interconnects, gold material is deposited to fill the cavitycreated at process 350 from the bottom of the via 260 up to the surfaceof the resist layer 285. In one example, gold material is deposited byan electroplating technique. In another example, prior to the goldplating a low-power oxygen plasma ash is applied to remove potentialresidue of the resist in the areas to be plated. According to certainembodiments of the present invention, although gold material is shown tobe used for forming the bumping pad, there can be many alternatives forthe pad material. For example, the pad material may be selected from agroup consisting of copper, nickel, gold, and silver. In anotherembodiment, the electroplating technique can be replaced by PVD or CVD.Referring to FIG. 4E, according to an embodiment of the presentinvention, the gold material in the via 260 is conductively connectedwith copper interconnects 230 at the bottom of via 260 through adiffusion barrier 280.

At the process 370, the resist layer is stripped. Additionally, thediffusion barrier layer 280 outside the rim of via 260 that is notcovered by the gold material 290 is etched away. FIG. 4F is a simplifieddiagram showing a method for resist stripping and metal etching forforming conductive bumping with copper interconnection according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims. One of ordinaryskill in the art would recognize many variations, alternatives, andmodifications.

For example, the resist layer 285 (shown in FIG. 4E) on top of the metaldiffusion barrier layer 280 is stripped by organic stripping employingorganic strippers. The organic stripper in one example can bephenol-based organic stripper. In another example, the organic strippercan be low-phenol or phenol-free organic stripper. An O₂ plasmastripping process may be followed.

At the process 370, the diffusion barrier layer 280 outside the rim ofvia 260 that is not covered by the gold material is etched away. Theetching of the diffusion barrier layer 280 can be performed by varioustechniques. In one embodiment, the etching of the diffusion barrierlayer 280 is accomplished by reactive ion etching which uses bothphysical sputtering and chemically reactive species to remove the metallayers. In one example, if gold seed layer was deposited before thediffusion barrier layer deposition, this gold seed layer can be removedby reverse plating. In another example, a dilute gold wet etch chemistryis applied to remove gold particles. In another embodiment, the etchingof the diffusion barrier layer 280 can be performed with plasma etching.In one example, the plasma etch is performed in a residue-free etchingprocess.

After the etching process to remove the diffusion barrier layer 280 thatis not covered by the gold material, the underlying surface of thedielectric layer 250 is revealed. Referring to FIG. 4F, according to anembodiment of the present invention, up to this sage of the process 370an initial form of a gold pad 290 with a certain height above adielectric layer 250 is formed. The gold pad 290 is in contact with thediffusion barrier layer 280 at the bottom and all sidewalls of the via260 including a portion outside the rim of the via 260.

At the process 370, thermal annealing is performed to the integratedcircuit system, including the just formed gold pad 290 in its initialform. In one example, the thermal annealing is performed by a remoteplasma activated process at the relatively low temperature 200° C. to600° C. Through the mass transportation the annealing process at leastpartially reshapes the gold pad 290 above the surface of the dielectriclayer 250, making it ready for conductive bumping process.

At process 380, conductive bumping contact with a substrate is formed.FIG. 4G is a simplified diagram showing a process for forming conductivebumping with copper interconnection according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims. One of ordinary skill in the artwould recognize many variations, alternatives, and modifications. Forexample, the conductive bump used in the process is made from the goldpad 290 formed at the end of the process 370.

Referring to FIG. 4G, according to an embodiment of the presentinvention, an integrated circuit system 200 with one or more copperinterconnects including one or more conductive bumps 295 is formed. Asubstrate 400 is provided. The flip chip bumping process is thenperformed to create one or more conductive contacts between thesubstrate and the integrated circuit system 200 with one or more copperinterconnects through one or more conductive bumps 295. In oneembodiment, the conductive bumps are made from the gold pad 290 formedat the process 370. In another embodiment, the bumping process is a leadfree gold bumping process. According to certain embodiments of thepresent invention, the substrate 400 may be various types. For example,the substrate 400 can be a PCB board. In another example, the substrate400 is an interposer or a glass substrate. In another embodiment of theinvention, the substrate material can be organic or ceramic.

Many benefits are achieved by way of the present invention overconventional techniques. For example, in lead free flip chip goldbumping process, the present technique provides an replacement of thealuminum wire bonding by gold bumping. In another example, the presenttechnique provides a full copper interconnection for the gold bumpingprocess without aluminum material for the whole process. Someembodiments of the present invention provide an integrated circuitsystem with one or more copper interconnects without aluminum material.Certain embodiments of the present invention provide a process that iscompatible with conventional process technology. Moreover, the processdoes not require an additional mask for patterning the copper bond pad.Some embodiments of the present invention utilize copper CMP process toautomatically patterning the copper bond pad. Certain embodiments of thepresent invention reduce the possibility of the cross contaminationbetween aluminum and copper. Some embodiments of the present inventionimprove the speed of the whole chip.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

1. A method for making an integrated circuit system with one or morecopper interconnects, the one or more copper interconnects beingconductively connected with a substrate, the method comprising:depositing and patterning a first dielectric layer to form a first via;filling the first via through the first dielectric layer with a coppermaterial; depositing and patterning a second dielectric layer in contactwith the first dielectric layer to form a second via; forming adiffusion barrier layer, the diffusion barrier layer at least partiallyfilling the second via through the second dielectric layer, at least afirst part of the diffusion barrier layer in direct contact with thecopper material, at least a second part of the diffusion barrier layerin direct contact with the second dielectric layer; depositing andpatterning a photoresist layer on the diffusion barrier layer; at leastpartially filling the second via with a gold material, the gold materialbeing conductively connected to the copper material through thediffusion barrier layer; and conductively connecting the gold materialwith the substrate.
 2. The method of claim 1, wherein the firstdielectric layer can be fluorinated silica glass (FSG) or carbonizedsilicon dioxide.
 3. The method of claim 1, wherein the second dielectriclayer comprises a first sub-layer and a second sub-layer; wherein thefirst sub-layer is passivation oxide or silicon rich oxide (SRO) and thesecond sub-layer overlaying the first sub-layer is passivation SiON,Nitride, benzocyclobutene (BCB) or polyimide.
 4. The method of claim 3,wherein the first sub-layer is first deposited and the second sub-layeris deposited on top of the first sub-layer.
 5. The method of claim 1,wherein the diffusion barrier layer comprises at least one materiallayer selected from a group consisting of Ta, TaN, TaN/Ta, TiN, TiSiN,W, TiW, and WN.
 6. The method of claim 1 further comprising forming abarrier layer on the inner surface of the first via before fillingcopper material.
 7. The method of claim 6, wherein the barrier layercomprises TaN.
 8. The method of claim 1 further comprising an annealingprocess at a temperature between 200° C. and 600° C.
 9. The method ofclaim 1, wherein the substrate is a PCB board, an interposer, or a glasssubstrate.
 10. The method of claim 1 wherein the gold material at leastpartially filling the second via is replaceable by Cu, Ni, or Ag. 11.The method of claim 1, wherein the diffusion barrier layer comprises agold seed layer.
 12. The method of claim 11, wherein the gold seed layeris deposited prior to the deposition of the diffusion barrier layer.